Infineon IRF6892STRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6892STRPBF

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)25nC@4.5V
Output Capacitance(Coss)850pF
Current - Continuous Drain(Id)28A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.51nF
TypeN-Channel

Technical details

25V 28A 2.1V 42W 1.7mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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