Infineon IRF6797MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6797MTRPBF

No reviews yet — be the first to review Infineon IRF6797MTRPBF.

Specifications

Gate Charge(Qg)45nC@10V
Configuration-
Drain to Source Voltage25V
Current - Continuous Drain(Id)36A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.35V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)720pF
RDS(on)1.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.79nF

Technical details

25V 36A 1.35V 2.8W 1.8mΩ@4.5V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs