Infineon IRF6785MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6785MTRPBF

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Specifications

Gate Charge(Qg)26nC@100V
Drain to Source Voltage200V
Current - Continuous Drain(Id)19A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 200V 19A 57W Surface Mount MG-WDSON-5

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