Infineon IRF6727MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6727MTRPBF

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Specifications

Gate Charge(Qg)74nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)32A;180A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.8W;89W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)6.19nF

Technical details

N-Channel 30V 32A 180A 2.8W 89W Surface Mount MG-WDSON-5

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