Infineon IRF6717MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6717MTRPBF

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)38A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.35V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)730pF
RDS(on)0.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.75nF

Technical details

N-Channel 25V 38A 2.8W Surface Mount MG-WDSON-5

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