Infineon IRF6716MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6716MTRPBF

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Specifications

Configuration-
Gate Charge(Qg)39nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)39A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)610pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.15nF

Technical details

25V 39A 1.9V 3.6W 1.2mΩ@10V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS

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