Infineon IRF6714MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6714MTRPBF

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Specifications

Configuration-
Gate Charge(Qg)29nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)29A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)490pF
RDS(on)2.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.89nF

Technical details

25V 29A 1.9V 2.8W 2.6mΩ@4.5V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS

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