Infineon IRF6713STRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6713STRPBF

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)21nC
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)22A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.88nF

Technical details

25V 22A 2.4V 42W 4.6mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS

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