Infineon · FETs & Power MOSFETs · MPN IRF6712STRPBF
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.57nF |
25V 17A 1.9V 2.2W 3.8mΩ@10V 1 N-channel MG-WDSON-4 Single FETs, MOSFETs RoHS