Infineon IRF6711STRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6711STRPBF

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Specifications

Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)84A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.81nF
TypeN-Channel

Technical details

25V 84A 2.35V 42W 3.8mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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