Infineon IRF6668TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6668TRPBF

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)55A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 80V 55A 89W DirectFET

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