Infineon · FETs & Power MOSFETs · MPN IRF6662TRPBF
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 17.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.36nF |
N-Channel 100V 8.3A 2.8W Surface Mount MG-WDSON-5