Infineon · FETs & Power MOSFETs · MPN IRF6655TRPBF
No reviews yet — be the first to review Infineon IRF6655TRPBF.
| Gate Charge(Qg) | 8.7nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 530pF |
| Type | N-Channel |
100V 19A 4.8V 42W 62mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS