Infineon IRF6648TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6648TRPBF

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.45nF
Current - Continuous Drain(Id)86A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.12nF
Type-

Technical details

N-Channel 60V 86A 89W DirectFET

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