Infineon IRF6646TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6646TRPBF

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)12A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.06nF

Technical details

N-Channel 80V 12A 2.8W Surface Mount MG-WDSON-5

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