Infineon IRF6645TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6645TRPBF

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5.7A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)890pF

Technical details

N-Channel 100V 5.7A 2.2W DirectFET

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