Infineon IRF6644TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6644TRPBF

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)57A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.77nF

Technical details

N-Channel 100V 57A 89W DirectFET

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