Infineon IRF6643TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6643TRPBF

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Specifications

Configuration-
Gate Charge(Qg)39nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)6.2A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)29mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF

Technical details

150V 6.2A 3V 89W 29mΩ@10V 1 N-channel DirectFET Single FETs, MOSFETs RoHS

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