Infineon · FETs & Power MOSFETs · MPN IRF6641TRPBF
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 51mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.29nF |
200V 26A 4V 89W 51mΩ@10V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS