Infineon IRF6637TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6637TRPBF

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.35V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.33nF

Technical details

30V 14A 1.35V 2.3W 5.7mΩ@10V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS

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