Infineon · FETs & Power MOSFETs · MPN IRF6636TRPBF
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.55V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 4.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.42nF |
20V 18A 1.55V 2.2W 4.6mΩ@4.5V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS