Infineon IRF6621TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6621TRPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11.7nC@4.5V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)55A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)12.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.46nF
TypeN-Channel

Technical details

30V 55A 2.25V 42W 12.1mΩ@4.5V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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