Infineon IRF6620TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6620TRPBF

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Specifications

Gate Charge(Qg)28nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)27A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.45V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)560pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.13nF

Technical details

N-Channel 20V 27A 2.8W Surface Mount MG-WDSON-5

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