Infineon · FETs & Power MOSFETs · MPN IRF6618TRPBF
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 43nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.64V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| RDS(on) | 3.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.64nF |
30V 170A 1.64V 2.8W 3.4mΩ@4.5V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS