Infineon IRF6617TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6617TRPBF

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Specifications

Gate Charge(Qg)17nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A;55A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.1W;42W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

N-Channel 30V 14A 55A 2.1W 42W Surface Mount MG-WDSON-5

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