Infineon · FETs & Power MOSFETs · MPN IRF6617TRPBF
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| Gate Charge(Qg) | 17nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14A;55A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Pd - Power Dissipation | 2.1W;42W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
N-Channel 30V 14A 55A 2.1W 42W Surface Mount MG-WDSON-5