Infineon IRF6613TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6613TRPBF

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)150A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)460pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.95nF

Technical details

N-Channel 40V 150A 89W Surface Mount MG-WDSON-5

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