Infineon IRF630NSTRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF630NSTRLPBF

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)9.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation82W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)575pF

Technical details

N-Channel 200V 9.3A 82W Surface Mount D2PAK

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