Infineon · FETs & Power MOSFETs · MPN IRF630NSPBF
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 82W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 575pF |
| Type | N-Channel |
200V 9.3A 4V 82W 300mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS