Infineon IRF6216PBF-IR

Infineon · FETs & Power MOSFETs · MPN IRF6216PBF-IR

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)49nC@10V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation2.5W
RDS(on)240mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.28nF

Technical details

150V 2.2A 5V 2.5W 240mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

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