Infineon IRF6201PBF

Infineon · FETs & Power MOSFETs · MPN IRF6201PBF

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Specifications

Gate Charge(Qg)195nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)1.735nF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)1.29nF
RDS(on)2.75mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)8.555nF

Technical details

20V 27A 1.1V 2.5W 2.75mΩ@2.5V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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