Infineon · FETs & Power MOSFETs · MPN IRF6201PBF
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| Gate Charge(Qg) | 195nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 1.735nF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.29nF |
| RDS(on) | 2.75mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.555nF |
20V 27A 1.1V 2.5W 2.75mΩ@2.5V 1 N-channel SO-8 Single FETs, MOSFETs RoHS