Infineon · FETs & Power MOSFETs · MPN IRF60R217
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 66nC |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.17nF |
60V 58A 2.1V 83W 8mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS