Infineon · FETs & Power MOSFETs · MPN IRF60B217
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| Gate Charge(Qg) | 66nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 7.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.23nF |
N-Channel 60V 60A 83W Through Hole TO-220AB