Infineon IRF5803TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF5803TRPBF

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)112mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.11nF
TypeP-Channel

Technical details

P-Channel 40V 3.4A 2W Surface Mount TSOP-6

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