Infineon IRF5802TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF5802TRPBF

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Specifications

Gate Charge(Qg)6.8nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)7.7pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)88pF

Technical details

N-Channel 150V 0.9A 2W Surface Mount TSOP-6

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