Infineon · FETs & Power MOSFETs · MPN IRF5802TRPBF
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| Gate Charge(Qg) | 6.8nC |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 900mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.7pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 88pF |
N-Channel 150V 0.9A 2W Surface Mount TSOP-6