Infineon · FETs & Power MOSFETs · MPN IRF5801TRPBF
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| Gate Charge(Qg) | 3.9nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.3pF |
| RDS(on) | 2.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 88pF |
200V 600mA 3V 2W 2.2Ω@10V 1 N-channel TSOP-6 Single FETs, MOSFETs RoHS