Infineon IRF530NSPBF

Infineon · FETs & Power MOSFETs · MPN IRF530NSPBF

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Specifications

Gate Charge(Qg)37nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF

Technical details

100V 17A 4V 70W 90mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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