Infineon IRF530NPBF

Infineon · FETs & Power MOSFETs · MPN IRF530NPBF

No reviews yet — be the first to review Infineon IRF530NPBF.

Specifications

Gate Charge(Qg)37nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF

Technical details

N-Channel 100V 17A 70W Through Hole TO-220AB

Related FETs & Power MOSFETs