Infineon IRF5210STRRPBF

Infineon · FETs & Power MOSFETs · MPN IRF5210STRRPBF

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Specifications

Gate Charge(Qg)230nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.78nF

Technical details

P-Channel 100V 38A 3.1W Surface Mount D2PAK

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