Infineon IRF5210STRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF5210STRLPBF

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Specifications

Gate Charge(Qg)230nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.78nF
TypeP-Channel

Technical details

P-Channel 100V 38A 170W Surface Mount D2PAK

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