Infineon · FETs & Power MOSFETs · MPN IRF5210PBF
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| Gate Charge(Qg) | 180nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 790pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | P-Channel |
P-Channel 100V 40A 200W Through Hole TO-220AB