Infineon IRF520NSTRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF520NSTRLPBF

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Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)9.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF

Technical details

N-Channel 100V 9.7A 3.8W Surface Mount D2PAK

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