Infineon IRF520NPBF

Infineon · FETs & Power MOSFETs · MPN IRF520NPBF

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)9.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
TypeN-Channel

Technical details

N-Channel 100V 9.7A 48W Through Hole TO-220AB

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