Infineon · FETs & Power MOSFETs · MPN IRF430
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 1.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 610pF |
| Type | N-Channel |
500V 4.5A 4V 75W 1.8Ω@10V 1 N-channel N-Channel TO-204AA(TO-3) Single FETs, MOSFETs RoHS