Infineon IRF4104PBF

Infineon · FETs & Power MOSFETs · MPN IRF4104PBF

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Specifications

Gate Charge(Qg)100nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)380pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 40V 120A 140W Through Hole TO-220AB

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