Infineon · FETs & Power MOSFETs · MPN IRF40H233
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 57nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
40V 63A 3.9V 50W 6.2mΩ@10V 1 N-channel TDSON-8-4 Single FETs, MOSFETs RoHS