Infineon · FETs & Power MOSFETs · MPN IRF40H210
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| Gate Charge(Qg) | 101nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 805pF |
| Current - Continuous Drain(Id) | 201A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 518pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.406nF |
| Type | N-Channel |
40V 201A 2.3V 125W 1.7mΩ@10V 1 N-channel N-Channel PQFN-8(4.9x5.8) Single FETs, MOSFETs RoHS