Infineon IRF3808STRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF3808STRLPBF

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage75V
Current - Continuous Drain(Id)106A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.31nF

Technical details

75V 106A 4V 200W 7mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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