Infineon IRF3808PBF

Infineon · FETs & Power MOSFETs · MPN IRF3808PBF

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)6.01nF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)890pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5pF

Technical details

75V 140A 4V 330W 7mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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