Infineon IRF3710ZSPBF

Infineon · FETs & Power MOSFETs · MPN IRF3710ZSPBF

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)120nC@10V
Current - Continuous Drain(Id)59A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

100V 59A 4V 160W 18mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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