Infineon IRF3709SPBF

Infineon · FETs & Power MOSFETs · MPN IRF3709SPBF

No reviews yet — be the first to review Infineon IRF3709SPBF.

Specifications

Gate Charge(Qg)41nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.672nF
TypeN-Channel

Technical details

30V 90A 3V 120W 9mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs